ABB Softstartéry - komunikace (EN)

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Vydal: ABB s.r.o, ELSYNN Autor: ABB ELSYnn

Strana 204 z 225







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No, 3 63 Read/Write Start Rampl 1st sequence, time for start ramp -120 Sec 64 Read/Write Init Voltl 1st sequence, initial voltage for start ramp % 65 Read/Write Curr Liml 1st sequence, current limit 1,5 7,0 xle 66 Read/Write lst Set 1st sequence, motor rated current 3000 (*) Amp 67 Read/Write Start Ramp2 2nd sequence, time for start ramp -120 Sec 68 Read/Write Init Volt2 2nd sequence, initial voltage for start ramp % 69 Read/Write Curr Lim2 2nd sequence, current limit 1,5 7,0 xle 1SFC132051M0201 11 . 59 Read Fieldb Ctrl Control the softstarter with fieldbus No, Yes 60 Read Fieldb Type Type fieldbus AS-Int, Other 61 Read Fieldb Addr Fieldbus address 1000 62 Read/Write Seq Number sequences for sequence start. Type operation for frequency fault Stop-M, Stop-A 47 Read/Write Temp Op Type operation for heat sink over temperature fault Stop-M, Stop-A 48 Read/Write SCR Op Type operation for thyristor short circuit fault Stop-M, Stop-A 49 Read In0 Function programmable input In0 None, Reset, Enable, Jog, DOL-on, Start2, FB-Dis 50 Read Inl Function programmable input In1 None, Reset, Enable, Jog, DOL-on, Start3, FB-Dis 51 Read/Write Relay Function programmable relay output Run, TOR, Event 52 Read/Write Relay Function programmable relay output Run, TOR, Event 53 Read/Write Relay Function programmable relay output Run, TOR, Event 54 Read/Write Outp Function programmable software output Run, TOR, Event 55 Read/Write Event K4 Different events include for signalling with K4 “Event” selected 0 65535, Bit mask see separate description. 56 Raed/Write Event K5 Different events include for signalling with K5 “Event” selected 0 65535, Bit mask see separate description.Type Parameter Description Range Unit 23 Read/Write Underl Lev Trip level for Underload protection 0,4 0,8 xle 24 Read/Write Underl Time Trip time for Underload protection Sec 25 Read/Write Underl Type operation for Underload protection Stop-M, Stop-A, Ind 26 Read/Write Phase Imb Phase imbalance protection No, Yes 27 Read/Write Imb Lev Trip level for phase imbalance protection % 28 Read/Write Imb Op Type operation for phase imbalance protection Stop-M, Stop-A, Ind 29 Read/Write High High current protection No, Yes 30 Read/Write High Type operation for high current protection Stop-M, Stop-A, Ind 31 Read/Write Phase Rev Phase reversal protection No, Yes 32 Read/Write Rev Op Type operation for phase reversal protection Stop-M, Stop-A, Ind 33 Read/Write PTC PTC protection No, Yes 34 Read/Write PTC Type operation for PTC protection Stop-M, Stop-A, Ind 35 Read/Write Ext ByPass External By-pass contactor used No, Yes 36 Read Dummy Hidden (Not used) 0 37 Read/Write Warn I=High High current warning No, Yes 38 Read/Write I=H Lev Trip level for high current warning O, 00 1 m o' xle 39 Read/Write Warn I=Low Low current warning No, Yes 40 Read/Write I=L Lev Trip level for low current warning 0,4 1,0 xle 41 Read/Write Warn Overload warning No, Yes 42 Read/Write Lev Trip level for overload warning % 43 Read/Write Warn SCR OL Thyristor overload warning No, Yes 44 Read/Write Loss Type operation for phase loss fault Stop-M, Stop-A 45 Read/Write Fault Type operation for fieldbus fault Stop-M, Stop-A 46 Read/Write Freq Op. 57 Read/Write Event K6 Different events include for signalling with K6 “Event” selected 0 65535, Bit mask see separate description. 58 Read/Write Event V7 Different events include for signalling with V7 “Event” selected 0 65535, Bit mask see separate description